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NXP USA Inc.

BS108/01,126

N-Channel 200 V 300mA (Ta) 1W (Ta) Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerNXP USA Inc.
Manufacturer Product NumberBS108/01,126
DescriptionN-Channel 200 V 300mA (Ta) 1W (Ta) Through Hole TO-92-3
CategoryTransistors - FETs, MOSFETs - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

N-Channel 200 V 300mA (Ta) 1W (Ta) Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrNXP USA Inc.
Series-
PackageTape & Box (TB)
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.8V
Rds On (Max) @ Id, Vgs5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id1.8V @ 1mA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product NumberBS10
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7
BS108/01,126 | NXP USA Inc. | GQGF Electronic Components