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2N2222A

Bipolar (BJT) Transistor NPN 40 V 800 mA 500 mW Through Hole TO-18

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N2222A
DescriptionBipolar (BJT) Transistor NPN 40 V 800 mA 500 mW Through Hole TO-18
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 40 V 800 mA 500 mW Through Hole TO-18

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max500 mW
Frequency - Transition-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-206AA, TO-18-3 Metal Can
Supplier Device PackageTO-18
Base Product Number2N2222
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