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2N3014 onsemi
2N3014 onsemi

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onsemi

2N3014

Bipolar (BJT) Transistor NPN 20 V 200 mA 350MHz 300 mW Through Hole TO-52-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N3014
DescriptionBipolar (BJT) Transistor NPN 20 V 200 mA 350MHz 300 mW Through Hole TO-52-3
CategoryTransistors - Bipolar (BJT) - Single
DatasheetNot available
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 20 V 200 mA 350MHz 300 mW Through Hole TO-52-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)20 V
Vce Saturation (Max) @ Ib, Ic350mV @ 10mA, 100mA
Current - Collector Cutoff (Max)300nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 30mA, 400mV
Power - Max300 mW
Frequency - Transition350MHz
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-206AC, TO-52-3 Metal Can
Supplier Device PackageTO-52-3
Base Product Number2N301
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