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2N4403BU

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 625 mW Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N4403BU
DescriptionBipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 625 mW Through Hole TO-92-3
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.39000USD 0.39000
10USD 0.37635USD 3.7635
25USD 0.36270USD 9.0675
100USD 0.34905USD 34.905
250USD 0.33540USD 83.85
500USD 0.32175USD 160.875
1,000USD 0.30810USD 308.10
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 625 mW Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Power - Max625 mW
Frequency - Transition200MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Base Product Number2N4403
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