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2N4410

Bipolar (BJT) Transistor NPN 80 V 200 mA 625 mW Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N4410
DescriptionBipolar (BJT) Transistor NPN 80 V 200 mA 625 mW Through Hole TO-92-3
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 80 V 200 mA 625 mW Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic200mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 1V
Power - Max625 mW
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Base Product Number2N4410
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