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2N4918G onsemi

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onsemi

2N4918G

Bipolar (BJT) Transistor PNP 40 V 1 A 3MHz 30 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N4918G
DescriptionBipolar (BJT) Transistor PNP 40 V 1 A 3MHz 30 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.80000USD 0.80000
10USD 0.77200USD 7.72
25USD 0.74400USD 18.60
100USD 0.71600USD 71.60
250USD 0.68800USD 172.00
500USD 0.66000USD 330.00
1,000USD 0.63200USD 632.00
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 40 V 1 A 3MHz 30 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA, 1V
Power - Max30 W
Frequency - Transition3MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product Number2N4918
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