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2N4922G onsemi

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onsemi

2N4922G

Bipolar (BJT) Transistor NPN 60 V 1 A 3MHz 30 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N4922G
DescriptionBipolar (BJT) Transistor NPN 60 V 1 A 3MHz 30 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.95000USD 0.95000
10USD 0.91675USD 9.1675
25USD 0.88350USD 22.0875
100USD 0.85025USD 85.025
250USD 0.81700USD 204.25
500USD 0.78375USD 391.875
1,000USD 0.75050USD 750.50
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 60 V 1 A 3MHz 30 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA, 1V
Power - Max30 W
Frequency - Transition3MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product Number2N4922
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