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2N4923G onsemi

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2N4923G

Bipolar (BJT) Transistor NPN 80 V 1 A 3MHz 30 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N4923G
DescriptionBipolar (BJT) Transistor NPN 80 V 1 A 3MHz 30 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.77000USD 0.77000
10USD 0.74305USD 7.4305
25USD 0.71610USD 17.9025
100USD 0.68915USD 68.915
250USD 0.66220USD 165.55
500USD 0.63525USD 317.625
1,000USD 0.60830USD 608.30
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 80 V 1 A 3MHz 30 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA, 1V
Power - Max30 W
Frequency - Transition3MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product Number2N4923
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