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2N5195G onsemi

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2N5195G

Bipolar (BJT) Transistor PNP 80 V 4 A 2MHz 40 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N5195G
DescriptionBipolar (BJT) Transistor PNP 80 V 4 A 2MHz 40 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.96000USD 0.96000
10USD 0.92640USD 9.264
25USD 0.89280USD 22.32
100USD 0.85920USD 85.92
250USD 0.82560USD 206.40
500USD 0.79200USD 396.00
1,000USD 0.75840USD 758.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 80 V 4 A 2MHz 40 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1.5A, 2V
Power - Max40 W
Frequency - Transition2MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product Number2N5195
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