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onsemi

2N5550TA

Bipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92-3

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product Number2N5550TA

DescriptionBipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92-3

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92-3

Mfronsemi

Series-

PackageCut Tape (CT), Tape & Box (TB)

Product StatusActive

Transistor TypeNPN

Current - Collector (Ic) (Max)600 mA

Voltage - Collector Emitter Breakdown (Max)140 V

Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA

Current - Collector Cutoff (Max)100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V

Power - Max625 mW

Frequency - Transition300MHz

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads

Supplier Device PackageTO-92-3

Base Product Number2N5550