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2N5883G onsemi

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onsemi

2N5883G

Bipolar (BJT) Transistor PNP 60 V 25 A 4MHz 200 W Through Hole TO-204 (TO-3)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N5883G
DescriptionBipolar (BJT) Transistor PNP 60 V 25 A 4MHz 200 W Through Hole TO-204 (TO-3)
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 60 V 25 A 4MHz 200 W Through Hole TO-204 (TO-3)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTray
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic4V @ 6.25A, 25A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10A, 4V
Power - Max200 W
Frequency - Transition4MHz
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204 (TO-3)
Base Product Number2N5883
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