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2N6045G onsemi

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onsemi

2N6045G

Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 75 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2N6045G
DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 8 A 75 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.40USD 1.40
10USD 1.351USD 13.51
25USD 1.302USD 32.55
100USD 1.253USD 125.30
250USD 1.204USD 301.00
500USD 1.155USD 577.50
1,000USD 1.106USD 1,106.00
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 75 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Power - Max75 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product Number2N6045
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