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2N7000TA onsemi

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onsemi

2N7000TA

N-Channel 60 V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product Number2N7000TA
DescriptionN-Channel 60 V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.43000USD 0.43000
10USD 0.41495USD 4.1495
25USD 0.39990USD 9.9975
100USD 0.38485USD 38.485
250USD 0.36980USD 92.45
500USD 0.35475USD 177.375
1,000USD 0.33970USD 339.70
  • Product Attributes
  • Ordering Notes

N-Channel 60 V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageCut Tape (CT), Tape & Box (TB)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number2N7000
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