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2SA1962OTU onsemi

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onsemi

2SA1962OTU

Bipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product Number2SA1962OTU
DescriptionBipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.43USD 4.43
10USD 4.27495USD 42.7495
25USD 4.1199USD 102.9975
100USD 3.96485USD 396.485
250USD 3.8098USD 952.45
500USD 3.65475USD 1,827.375
1,000USD 3.4997USD 3,499.70
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusLast Time Buy
Transistor TypePNP
Current - Collector (Ic) (Max)17 A
Voltage - Collector Emitter Breakdown (Max)250 V
Vce Saturation (Max) @ Ib, Ic3V @ 800mA, 8A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Power - Max130 W
Frequency - Transition30MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P
Base Product Number2SA1962
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