GQGF Electronics
EnglishEnglish
USD
BD135G onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

BD135G

Bipolar (BJT) Transistor NPN 45 V 1.5 A 1.25 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberBD135G
DescriptionBipolar (BJT) Transistor NPN 45 V 1.5 A 1.25 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.88000USD 0.88000
10USD 0.84920USD 8.492
25USD 0.81840USD 20.46
100USD 0.78760USD 78.76
250USD 0.75680USD 189.20
500USD 0.72600USD 363.00
1,000USD 0.69520USD 695.20
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 45 V 1.5 A 1.25 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)45 V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Power - Max1.25 W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberBD135
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7