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BD139G onsemi

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onsemi

BD139G

Bipolar (BJT) Transistor NPN 80 V 1.5 A 12.5 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberBD139G
DescriptionBipolar (BJT) Transistor NPN 80 V 1.5 A 12.5 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.74000USD 0.74000
10USD 0.71410USD 7.141
25USD 0.68820USD 17.205
100USD 0.66230USD 66.23
250USD 0.63640USD 159.10
500USD 0.61050USD 305.25
1,000USD 0.58460USD 584.60
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 80 V 1.5 A 12.5 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Power - Max12.5 W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberBD139
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