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BD140G onsemi

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onsemi

BD140G

Bipolar (BJT) Transistor PNP 80 V 1.5 A 1.25 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberBD140G
DescriptionBipolar (BJT) Transistor PNP 80 V 1.5 A 1.25 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.87000USD 0.87000
10USD 0.83955USD 8.3955
25USD 0.80910USD 20.2275
100USD 0.77865USD 77.865
250USD 0.74820USD 187.05
500USD 0.71775USD 358.875
1,000USD 0.68730USD 687.30
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 80 V 1.5 A 1.25 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Power - Max1.25 W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberBD140
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