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BD681G onsemi

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BD681G

Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberBD681G
DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.91000USD 0.91000
10USD 0.87815USD 8.7815
25USD 0.84630USD 21.1575
100USD 0.81445USD 81.445
250USD 0.78260USD 195.65
500USD 0.75075USD 375.375
1,000USD 0.71890USD 718.90
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  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Power - Max40 W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberBD681
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