GQGF Electronics
EnglishEnglish
USD
BD682G onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

BD682G

Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberBD682G
DescriptionBipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.97000USD 0.97000
10USD 0.93605USD 9.3605
25USD 0.90210USD 22.5525
100USD 0.86815USD 86.815
250USD 0.83420USD 208.55
500USD 0.80025USD 400.125
1,000USD 0.76630USD 766.30
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Power - Max40 W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberBD682
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7