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BS108ZL1G onsemi

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onsemi

BS108ZL1G

N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberBS108ZL1G
DescriptionN-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageCut Tape (CT), Tape & Box (TB)
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2V, 2.8V
Rds On (Max) @ Id, Vgs8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id1.5V @ 1mA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 25 V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92 (TO-226)
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
Base Product NumberBS108
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