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FCP190N60E onsemi

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onsemi

FCP190N60E

N-Channel 600 V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberFCP190N60E
DescriptionN-Channel 600 V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.42USD 4.42
10USD 4.2653USD 42.653
25USD 4.1106USD 102.765
100USD 3.9559USD 395.59
250USD 3.8012USD 950.30
500USD 3.6465USD 1,823.25
1,000USD 3.4918USD 3,491.80
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesSuperFET® II
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3175 pF @ 25 V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Base Product NumberFCP190
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