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FDD86113LZ onsemi

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onsemi

FDD86113LZ

N-Channel 100 V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberFDD86113LZ
DescriptionN-Channel 100 V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.34USD 1.34
10USD 1.2931USD 12.931
25USD 1.2462USD 31.155
100USD 1.1993USD 119.93
250USD 1.1524USD 288.10
500USD 1.1055USD 552.75
1,000USD 1.0586USD 1,058.60
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesPowerTrench®
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs104mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds285 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 29W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Base Product NumberFDD86113
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