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FDP2532 onsemi

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onsemi

FDP2532

N-Channel 150 V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole TO-220-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberFDP2532
DescriptionN-Channel 150 V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole TO-220-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.97USD 3.97
10USD 3.83105USD 38.3105
25USD 3.6921USD 92.3025
100USD 3.55315USD 355.315
250USD 3.4142USD 853.55
500USD 3.27525USD 1,637.625
1,000USD 3.1363USD 3,136.30
  • Product Attributes
  • Ordering Notes

N-Channel 150 V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole TO-220-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesPowerTrench®
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5870 pF @ 25 V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Base Product NumberFDP25
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