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FDP3652 onsemi

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onsemi

FDP3652

N-Channel 100 V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberFDP3652
DescriptionN-Channel 100 V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.26USD 2.26
10USD 2.1809USD 21.809
25USD 2.1018USD 52.545
100USD 2.0227USD 202.27
250USD 1.9436USD 485.90
500USD 1.8645USD 932.25
1,000USD 1.7854USD 1,785.40
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesPowerTrench®
PackageTube
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2880 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Base Product NumberFDP36
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