GQGF Electronics
EnglishEnglish
USD
FDU6512A onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

FDU6512A

N-Channel 20 V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Through Hole I-PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberFDU6512A
DescriptionN-Channel 20 V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Through Hole I-PAK
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

N-Channel 20 V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Through Hole I-PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesPowerTrench®
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C10.7A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs21mOhm @ 10.7A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1082 pF @ 10 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 43W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Base Product NumberFDU65
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7