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FGA25N120ANTDTU onsemi

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onsemi

FGA25N120ANTDTU

IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Single
Manufactureronsemi
Manufacturer Product NumberFGA25N120ANTDTU
DescriptionIGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P
CategoryTransistors - IGBTs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.06USD 4.06
10USD 3.9179USD 39.179
25USD 3.7758USD 94.395
100USD 3.6337USD 363.37
250USD 3.4916USD 872.90
500USD 3.3495USD 1,674.75
1,000USD 3.2074USD 3,207.40
  • Product Attributes
  • Ordering Notes

IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusLast Time Buy
IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)90 A
Vce(on) (Max) @ Vge, Ic2.65V @ 15V, 50A
Power - Max312 W
Switching Energy4.1mJ (on), 960µJ (off)
Input TypeStandard
Gate Charge200 nC
Td (on/off) @ 25°C50ns/190ns
Test Condition600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)350 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P
Base Product NumberFGA25N120
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