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FGA50T65SHD-01 onsemi
FGA50T65SHD-01 onsemi

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onsemi

FGA50T65SHD-01

IGBT Trench Field Stop 650 V 100 A 319 W Through Hole TO-3PN

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Single
Manufactureronsemi
Manufacturer Product NumberFGA50T65SHD-01
DescriptionIGBT Trench Field Stop 650 V 100 A 319 W Through Hole TO-3PN
CategoryTransistors - IGBTs - Single
DatasheetNot available
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

IGBT Trench Field Stop 650 V 100 A 319 W Through Hole TO-3PN

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusLast Time Buy
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)100 A
Current - Collector Pulsed (Icm)150 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max319 W
Switching Energy1.28mJ (on), 384µJ (off)
Input TypeStandard
Gate Charge87 nC
Td (on/off) @ 25°C22.4ns/73.6ns
Test Condition400V, 50A, 6Ohm, 15V
Reverse Recovery Time (trr)34.6 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN
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