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FJA13009TU onsemi

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onsemi

FJA13009TU

Bipolar (BJT) Transistor NPN 400 V 12 A 4MHz 130 W Through Hole TO-3P

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberFJA13009TU
DescriptionBipolar (BJT) Transistor NPN 400 V 12 A 4MHz 130 W Through Hole TO-3P
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 400 V 12 A 4MHz 130 W Through Hole TO-3P

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic3V @ 3A, 12A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 5A, 5V
Power - Max130 W
Frequency - Transition4MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P
Base Product NumberFJA13009
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