GQGF Electronics
EnglishEnglish
USD
FJNS3210RBU onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

FJNS3210RBU

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 100 mA 250 MHz 300 mW Through Hole TO-92S

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single, Pre-Biased
Manufactureronsemi
Manufacturer Product NumberFJNS3210RBU
DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 100 mA 250 MHz 300 mW Through Hole TO-92S
CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 100 mA 250 MHz 300 mW Through Hole TO-92S

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Resistor - Base (R1)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250 MHz
Power - Max300 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Short Body
Supplier Device PackageTO-92S
Base Product NumberFJNS32
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7