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FQU1N80TU onsemi

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onsemi

FQU1N80TU

N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberFQU1N80TU
DescriptionN-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.02USD 1.02
10USD 0.98430USD 9.843
25USD 0.94860USD 23.715
100USD 0.91290USD 91.29
250USD 0.87720USD 219.30
500USD 0.84150USD 420.75
1,000USD 0.80580USD 805.80
  • Product Attributes
  • Ordering Notes

N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesQFET®
PackageTube
Product StatusLast Time Buy
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.2 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds195 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Base Product NumberFQU1N80
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