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HGTG10N120BND onsemi

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HGTG10N120BND

IGBT NPT 1200 V 35 A 298 W Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Single
Manufactureronsemi
Manufacturer Product NumberHGTG10N120BND
DescriptionIGBT NPT 1200 V 35 A 298 W Through Hole TO-247-3
CategoryTransistors - IGBTs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.14USD 4.14
10USD 3.9951USD 39.951
25USD 3.8502USD 96.255
100USD 3.7053USD 370.53
250USD 3.5604USD 890.10
500USD 3.4155USD 1,707.75
1,000USD 3.2706USD 3,270.60
  • Product Attributes
  • Ordering Notes

IGBT NPT 1200 V 35 A 298 W Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusLast Time Buy
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)80 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298 W
Switching Energy850µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100 nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)70 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Base Product NumberHGTG10N120
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HGTG10N120BND | onsemi | GQGF Electronic Components