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HGTG20N60B3D onsemi

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HGTG20N60B3D

IGBT 600 V 40 A 165 W Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Single
Manufactureronsemi
Manufacturer Product NumberHGTG20N60B3D
DescriptionIGBT 600 V 40 A 165 W Through Hole TO-247-3
CategoryTransistors - IGBTs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 6.45USD 6.45
10USD 6.22425USD 62.2425
25USD 5.9985USD 149.9625
100USD 5.77275USD 577.275
250USD 5.547USD 1,386.75
500USD 5.32125USD 2,660.625
1,000USD 5.0955USD 5,095.50
  • Product Attributes
  • Ordering Notes

IGBT 600 V 40 A 165 W Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusLast Time Buy
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)40 A
Current - Collector Pulsed (Icm)160 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Power - Max165 W
Switching Energy475µJ (on), 1.05mJ (off)
Input TypeStandard
Gate Charge80 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)55 ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Base Product NumberHGTG20N60
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