GQGF Electronics
EnglishEnglish
USD
HUF75652G3 onsemi

Image shown is a representation. Verify specifications with the product datasheet.

onsemi

HUF75652G3

N-Channel 100 V 75A (Tc) 515W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberHUF75652G3
DescriptionN-Channel 100 V 75A (Tc) 515W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 10.50USD 10.50
10USD 10.1325USD 101.325
25USD 9.765USD 244.125
100USD 9.3975USD 939.75
250USD 9.03USD 2,257.50
500USD 8.6625USD 4,331.25
1,000USD 8.295USD 8,295.00
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 75A (Tc) 515W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesUltraFET™
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs475 nC @ 20 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7585 pF @ 25 V
FET Feature-
Power Dissipation (Max)515W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberHUF75652
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7