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KSB1151YS

Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberKSB1151YS
DescriptionBipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.96000USD 0.96000
10USD 0.92640USD 9.264
25USD 0.89280USD 22.32
100USD 0.85920USD 85.92
250USD 0.82560USD 206.40
500USD 0.79200USD 396.00
1,000USD 0.75840USD 758.40
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic300mV @ 200mA, 2A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 1V
Power - Max1.3 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126-3
Base Product NumberKSB1151
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KSB1151YS | onsemi | GQGF Electronic Components