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KSB811YTA onsemi

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onsemi

KSB811YTA

Bipolar (BJT) Transistor PNP 25 V 1 A 110MHz 350 mW Through Hole TO-92S

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberKSB811YTA
DescriptionBipolar (BJT) Transistor PNP 25 V 1 A 110MHz 350 mW Through Hole TO-92S
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 25 V 1 A 110MHz 350 mW Through Hole TO-92S

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTape & Box (TB)
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)25 V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 1V
Power - Max350 mW
Frequency - Transition110MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Short Body
Supplier Device PackageTO-92S
Base Product NumberKSB811
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