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onsemi

KSC2383YTA

Bipolar (BJT) Transistor NPN 160 V 1 A 100MHz 900 mW Through Hole TO-92-3

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberKSC2383YTA

DescriptionBipolar (BJT) Transistor NPN 160 V 1 A 100MHz 900 mW Through Hole TO-92-3

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN 160 V 1 A 100MHz 900 mW Through Hole TO-92-3

Mfronsemi

Series-

PackageCut Tape (CT), Tape & Box (TB)

Product StatusActive

Transistor TypeNPN

Current - Collector (Ic) (Max)1 A

Voltage - Collector Emitter Breakdown (Max)160 V

Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 200mA, 5V

Power - Max900 mW

Frequency - Transition100MHz

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)

Supplier Device PackageTO-92-3

Base Product NumberKSC2383