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onsemi

KSC2682OS

Bipolar (BJT) Transistor NPN 180 V 100 mA 200MHz 1.2 W Through Hole TO-126-3

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberKSC2682OS

DescriptionBipolar (BJT) Transistor NPN 180 V 100 mA 200MHz 1.2 W Through Hole TO-126-3

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN 180 V 100 mA 200MHz 1.2 W Through Hole TO-126-3

Mfronsemi

Series-

PackageBulk

Product StatusObsolete

Transistor TypeNPN

Current - Collector (Ic) (Max)100 mA

Voltage - Collector Emitter Breakdown (Max)180 V

Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V

Power - Max1.2 W

Frequency - Transition200MHz

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-225AA, TO-126-3

Supplier Device PackageTO-126-3

Base Product NumberKSC2682