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KSD1691GSTU onsemi

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KSD1691GSTU

Bipolar (BJT) Transistor NPN 60 V 5 A 1.3 W Through Hole TO-126-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberKSD1691GSTU
DescriptionBipolar (BJT) Transistor NPN 60 V 5 A 1.3 W Through Hole TO-126-3
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.88000USD 0.88000
10USD 0.84920USD 8.492
25USD 0.81840USD 20.46
100USD 0.78760USD 78.76
250USD 0.75680USD 189.20
500USD 0.72600USD 363.00
1,000USD 0.69520USD 695.20
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 60 V 5 A 1.3 W Through Hole TO-126-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic300mV @ 200mA, 2A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A, 1V
Power - Max1.3 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126-3
Base Product NumberKSD1691
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