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KSD2012GTU onsemi

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KSD2012GTU

Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberKSD2012GTU
DescriptionBipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.43USD 1.43
10USD 1.37995USD 13.7995
25USD 1.3299USD 33.2475
100USD 1.27985USD 127.985
250USD 1.2298USD 307.45
500USD 1.17975USD 589.875
1,000USD 1.1297USD 1,129.70
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 5V
Power - Max25 W
Frequency - Transition3MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F-3
Base Product NumberKSD2012
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