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KSD471ACYTA

Bipolar (BJT) Transistor NPN 30 V 1 A 130MHz 800 mW Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberKSD471ACYTA
DescriptionBipolar (BJT) Transistor NPN 30 V 1 A 130MHz 800 mW Through Hole TO-92-3
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.32000USD 0.32000
10USD 0.30880USD 3.088
25USD 0.29760USD 7.44
100USD 0.28640USD 28.64
250USD 0.27520USD 68.80
500USD 0.26400USD 132.00
1,000USD 0.25280USD 252.80
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 30 V 1 A 130MHz 800 mW Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageCut Tape (CT), Tape & Box (TB)
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)30 V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 1V
Power - Max800 mW
Frequency - Transition130MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Base Product NumberKSD471
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