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onsemi

KSE800STU

Bipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126-3

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberKSE800STU

DescriptionBipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126-3

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126-3

Mfronsemi

Series-

PackageTube

Product StatusActive

Transistor TypeNPN - Darlington

Current - Collector (Ic) (Max)4 A

Voltage - Collector Emitter Breakdown (Max)60 V

Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A

Current - Collector Cutoff (Max)100µA

DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V

Power - Max40 W

Frequency - Transition-

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-225AA, TO-126-3

Supplier Device PackageTO-126-3

Base Product NumberKSE800