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KSP06TA

Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberKSP06TA
DescriptionBipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Through Hole TO-92-3
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.35000USD 0.35000
10USD 0.33775USD 3.3775
25USD 0.32550USD 8.1375
100USD 0.31325USD 31.325
250USD 0.30100USD 75.25
500USD 0.28875USD 144.375
1,000USD 0.27650USD 276.50
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageCut Tape (CT), Tape & Box (TB)
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Power - Max625 mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Base Product NumberKSP06
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