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onsemi

KSP12BU

Bipolar (BJT) Transistor NPN - Darlington 20 V 625 mW Through Hole TO-92-3

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberKSP12BU

DescriptionBipolar (BJT) Transistor NPN - Darlington 20 V 625 mW Through Hole TO-92-3

CategoryTransistors - Bipolar (BJT) - Single

DatasheetNot available

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN - Darlington 20 V 625 mW Through Hole TO-92-3

Mfronsemi

Series-

PackageBulk

Product StatusObsolete

Transistor TypeNPN - Darlington

Voltage - Collector Emitter Breakdown (Max)20 V

Vce Saturation (Max) @ Ib, Ic1V @ 10µA, 10mA

Current - Collector Cutoff (Max)100nA

DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 10mA, 5V

Power - Max625 mW

Frequency - Transition-

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads

Supplier Device PackageTO-92-3

Base Product NumberKSP12