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MBT35200MT1G onsemi

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MBT35200MT1G

Bipolar (BJT) Transistor PNP 35 V 2 A 100MHz 625 mW Surface Mount 6-TSOP

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMBT35200MT1G
DescriptionBipolar (BJT) Transistor PNP 35 V 2 A 100MHz 625 mW Surface Mount 6-TSOP
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.48000USD 0.48000
10USD 0.46320USD 4.632
25USD 0.44640USD 11.16
100USD 0.42960USD 42.96
250USD 0.41280USD 103.20
500USD 0.39600USD 198.00
1,000USD 0.37920USD 379.20
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 35 V 2 A 100MHz 625 mW Surface Mount 6-TSOP

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)35 V
Vce Saturation (Max) @ Ib, Ic310mV @ 20mA, 2A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1.5A, 1.5V
Power - Max625 mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
Base Product NumberMBT35200
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