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onsemi

MJ11016G

Bipolar (BJT) Transistor NPN - Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberMJ11016G

DescriptionBipolar (BJT) Transistor NPN - Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN - Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)

Mfronsemi

Series-

PackageTray

Product StatusActive

Transistor TypeNPN - Darlington

Current - Collector (Ic) (Max)30 A

Voltage - Collector Emitter Breakdown (Max)120 V

Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A

Current - Collector Cutoff (Max)1mA

DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V

Power - Max200 W

Frequency - Transition4MHz

Operating Temperature-55°C ~ 200°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-204AA, TO-3

Supplier Device PackageTO-204 (TO-3)

Base Product NumberMJ11016