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MJ11032G onsemi

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MJ11032G

Bipolar (BJT) Transistor NPN - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJ11032G
DescriptionBipolar (BJT) Transistor NPN - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 15.38USD 15.38
10USD 14.8417USD 148.417
25USD 14.3034USD 357.585
100USD 13.7651USD 1,376.51
250USD 13.2268USD 3,306.70
500USD 12.6885USD 6,344.25
1,000USD 12.1502USD 12,150.20
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTray
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Power - Max300 W
Frequency - Transition-
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204 (TO-3)
Base Product NumberMJ11032
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