Image shown is a representation. Verify specifications with the product datasheet.

onsemi

MJ11033G

Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberMJ11033G

DescriptionBipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)

Mfronsemi

Series-

PackageTray

Product StatusActive

Transistor TypePNP - Darlington

Current - Collector (Ic) (Max)50 A

Voltage - Collector Emitter Breakdown (Max)120 V

Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A

Current - Collector Cutoff (Max)2mA

DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V

Power - Max300 W

Frequency - Transition-

Operating Temperature-55°C ~ 200°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-204AE

Supplier Device PackageTO-204 (TO-3)

Base Product NumberMJ11033