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onsemi

MJ14002G

Bipolar (BJT) Transistor NPN 80 V 60 A 300 W Through Hole TO-204 (TO-3)

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberMJ14002G

DescriptionBipolar (BJT) Transistor NPN 80 V 60 A 300 W Through Hole TO-204 (TO-3)

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN 80 V 60 A 300 W Through Hole TO-204 (TO-3)

Mfronsemi

Series-

PackageTray

Product StatusActive

Transistor TypeNPN

Current - Collector (Ic) (Max)60 A

Voltage - Collector Emitter Breakdown (Max)80 V

Vce Saturation (Max) @ Ib, Ic3V @ 12A, 60A

Current - Collector Cutoff (Max)1mA

DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 50A, 3V

Power - Max300 W

Frequency - Transition-

Operating Temperature-65°C ~ 200°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-204AE

Supplier Device PackageTO-204 (TO-3)

Base Product NumberMJ14002