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MJD112-1G onsemi

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MJD112-1G

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole I-PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberMJD112-1G
DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole I-PAK
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.08USD 1.08
10USD 1.0422USD 10.422
25USD 1.0044USD 25.11
100USD 0.96660USD 96.66
250USD 0.92880USD 232.20
500USD 0.89100USD 445.50
1,000USD 0.85320USD 853.20
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole I-PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75 W
Frequency - Transition25MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK
Base Product NumberMJD112
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