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onsemi

MJD44H11-1G

Bipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Through Hole I-PAK

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberMJD44H11-1G

DescriptionBipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Through Hole I-PAK

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Through Hole I-PAK

Mfronsemi

Series-

PackageTube

Product StatusActive

Transistor TypeNPN

Current - Collector (Ic) (Max)8 A

Voltage - Collector Emitter Breakdown (Max)80 V

Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A

Current - Collector Cutoff (Max)1µA

DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A, 1V

Power - Max1.75 W

Frequency - Transition85MHz

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Supplier Device PackageI-PAK

Base Product NumberMJD44